JPH0326547B2 - - Google Patents

Info

Publication number
JPH0326547B2
JPH0326547B2 JP58119581A JP11958183A JPH0326547B2 JP H0326547 B2 JPH0326547 B2 JP H0326547B2 JP 58119581 A JP58119581 A JP 58119581A JP 11958183 A JP11958183 A JP 11958183A JP H0326547 B2 JPH0326547 B2 JP H0326547B2
Authority
JP
Japan
Prior art keywords
groove
capacitor
thin film
region
dielectric thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58119581A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6012752A (ja
Inventor
Takashi Morie
Kazushige Minegishi
Ban Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58119581A priority Critical patent/JPS6012752A/ja
Publication of JPS6012752A publication Critical patent/JPS6012752A/ja
Publication of JPH0326547B2 publication Critical patent/JPH0326547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58119581A 1983-07-01 1983-07-01 半導体記憶装置およびその製造方法 Granted JPS6012752A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58119581A JPS6012752A (ja) 1983-07-01 1983-07-01 半導体記憶装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58119581A JPS6012752A (ja) 1983-07-01 1983-07-01 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6012752A JPS6012752A (ja) 1985-01-23
JPH0326547B2 true JPH0326547B2 (en]) 1991-04-11

Family

ID=14764897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58119581A Granted JPS6012752A (ja) 1983-07-01 1983-07-01 半導体記憶装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6012752A (en])

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031268A (ja) * 1983-07-29 1985-02-18 Nec Corp Ｍｉｓ型半導体記憶装置
JPS6118167A (ja) * 1984-07-04 1986-01-27 Hitachi Ltd 半導体装置
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
KR900001836B1 (ko) * 1985-07-02 1990-03-24 마쯔시다덴기산교 가부시기가이샤 반도체기억장치 및 그 제조방법
WO1987000690A2 (en) * 1985-07-25 1987-01-29 American Telephone & Telegraph Company High-performance dram arrays including trench capacitors
JPS6242442A (ja) * 1985-08-19 1987-02-24 Oki Electric Ind Co Ltd ダイナミツクｒａｍ半導体装置及びその製造方法
JPH0682804B2 (ja) * 1985-12-24 1994-10-19 三菱電機株式会社 半導体記憶装置
JPH0815206B2 (ja) * 1986-01-30 1996-02-14 三菱電機株式会社 半導体記憶装置
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
JP2608054B2 (ja) * 1986-10-20 1997-05-07 三菱電機株式会社 半導体記憶装置の製造方法
JPS63207169A (ja) * 1987-02-24 1988-08-26 Toshiba Corp 半導体記憶装置及びその製造方法
JPS63232444A (ja) * 1987-03-20 1988-09-28 Mitsubishi Electric Corp 半導体装置
JP2607508B2 (ja) * 1987-03-31 1997-05-07 株式会社東芝 半導体記憶装置
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5057887A (en) * 1989-05-14 1991-10-15 Texas Instruments Incorporated High density dynamic ram cell
US5111259A (en) * 1989-07-25 1992-05-05 Texas Instruments Incorporated Trench capacitor memory cell with curved capacitors
US4978634A (en) * 1989-07-25 1990-12-18 Texas Instruments, Incorporated Method of making trench DRAM cell with stacked capacitor and buried lateral contact
US5017506A (en) * 1989-07-25 1991-05-21 Texas Instruments Incorporated Method for fabricating a trench DRAM
JP2006196843A (ja) * 2005-01-17 2006-07-27 Toshiba Corp 半導体装置およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1439351A (en) * 1972-06-02 1976-06-16 Texas Instruments Inc Capacitor
US4295264A (en) * 1975-12-29 1981-10-20 Texas Instruments Incorporated Method of making integrated circuit MOS capacitor using implanted region to change threshold
US4240092A (en) * 1976-09-13 1980-12-16 Texas Instruments Incorporated Random access memory cell with different capacitor and transistor oxide thickness
US4112575A (en) * 1976-12-20 1978-09-12 Texas Instruments Incorporated Fabrication methods for the high capacity ram cell
JPS5643171U (en]) * 1979-09-10 1981-04-20
JPH0612804B2 (ja) * 1982-06-02 1994-02-16 株式会社東芝 半導体記憶装置
JPS58215053A (ja) * 1982-06-08 1983-12-14 Nec Corp 半導体集積回路装置
JPS592362A (ja) * 1982-06-28 1984-01-07 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPS59232455A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPS6012752A (ja) 1985-01-23

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